| PART |
Description |
Maker |
| S098Q300W AS098Q300W |
High Power Stacked Infrared Laser Diode Array
|
Rochester Electronics
|
| AS081C200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| ELA-920-22X60-2-6 ELA-920-22X60-12-6 |
Infrared LED - Array
|
Roithner LaserTechnik GmbH
|
| AMG8852 AMG8851 AMG8831 AMG8832 |
Infrared Array Sensor Grid-EYE
|
Panasonic Semiconductor
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 2SK1444LS |
Ultrahigh-Speed Switching Applications 超高速开关应
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC5041 |
7 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
